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GD25B256D Datasheet(PDF) 35 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25B256D Datasheet(HTML) 35 Page - GigaDevice Semiconductor (Beijing) Inc. |
35 / 82 page 3.3V Uniform Sector Dual and Quad Serial Flash GD25B256D 35 7.13. Quad I/O Fast Read (QIOFR EBH or 4QIOFR ECH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-Byte address (A23- 0) and a “Continuous Read Mode” Byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO2, IO3, and each bit being latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhea d through setting the “Continuous Read Mode” bits (M7-0) after the input 3-Byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the next command requires the command code, thus returning to normal operation. A Reset command can be used to reset (M5-4) before issuing normal command. Figure 28 Quad I/O Fast Read Sequence Diagram (M5-4 ≠ (1, 0), ADS=0) Note: 1. The dummy clock number is configurable. Command 0 1 2 3 4 5 6 7 EBH CS# SCLK SI(IO0) SO(IO1) 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 16 17 18 19 20 21 22 23 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 A23-16 A15-8 A7-0 M7-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 IO2 IO3 4 5 6 7 Dummy Byte1 Byte2 |
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