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RN1405 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1405 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN1401,RN1402,RN1403,RN1404,RN1405,RN1406 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401,RN1402,RN1403 RN1404,RN1405,RN1406 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2401~RN2406 Equivalent Circuit and Bias Resister Values Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1401~1406 VCEO 50 V RN1401~1404 10 Emitter-base voltage RN1405, 1406 VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range RN1401~1406 Tstg −55~150 °C JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 2-3F1A Weight: 0.012g Unit: mm Type No. R1 (kΩ R2 (kΩ RN1401 4.7 4.7 RN1402 10 10 RN1403 22 22 RN1404 47 47 RN1405 2.2 47 RN1406 4.7 47 |
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