TC7WZ00FU datasheet(1/7 Pages) TOSHIBA

Part #	TC7WZ00FU

Description	2 Input Nand Gate

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC7WZ00FU/FK

2002-01-16

1

TOSHIBA CMOS Digital Integrated Circuit

Silicon Monolithic

TC7WZ00FU,TC7WZ00FK

2 Input Nand Gate

Features

· High output drive: ±24 mA (min) @VCC = 3 V

· Super high speed operation: tpd 2.4 ns (typ.) @VCC = 5 V,

50 pF

· Operation voltage range: VCC (opr) = 1.65~5.5 V

· Latch-up performance: ±500 mA or more

· ESD performance: ±200 V or more (JEITA)

±2000 V or more (MIL)

· Power down protection is provided on all inputs and outputs.

· Matches the performance of TC74LCX series when operated

at 3.3 V VCC.

Marking

Maximum Ratings (Ta

==== 25°C)

Pin Assignment (top view)

TC7WZ00FU

TC7WZ00FK

Weight

SSOP8-P-0.65

: 0.02 g (typ.)

SSOP8-P-0.50A

: 0.01 g (typ.)

Characteristics

Symbol

Rating

Unit

Power supply voltage

VCC

-0.5~6

V

DC input voltage

VIN

-0.5~6

V

DC output voltage

VOUT

-0.5~6

V

Input diode current

IIK

-20

mA

Output diode current

IOK

-20

mA

DC output current

IOUT

±50

mA

DC VCC/ground current

ICC

±50

mA

Power dissipation

PD

300 (SM8)

200 (US8)

mW

Storage temperature

Tstg

-65~150

°C

Lead temperature (10s)

TL

260

°C

SM8

US8

Type name

Z 00

Lot No.

WZ

00

VCC

2B

2A

1A

GND

1B

1

2

3

4

2Y

1Y

8

7

6

5

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TC7WZ00FU Datasheet(PDF) 1 Page - Toshiba Semiconductor

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