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TC7WZ00FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7WZ00FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7WZ00FU/FK 2002-01-16 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WZ00FU,TC7WZ00FK 2 Input Nand Gate Features · High output drive: ±24 mA (min) @VCC = 3 V · Super high speed operation: tpd 2.4 ns (typ.) @VCC = 5 V, 50 pF · Operation voltage range: VCC (opr) = 1.65~5.5 V · Latch-up performance: ±500 mA or more · ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) · Power down protection is provided on all inputs and outputs. · Matches the performance of TC74LCX series when operated at 3.3 V VCC. Marking Maximum Ratings (Ta ==== 25°C) Pin Assignment (top view) TC7WZ00FU TC7WZ00FK Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Characteristics Symbol Rating Unit Power supply voltage VCC -0.5~6 V DC input voltage VIN -0.5~6 V DC output voltage VOUT -0.5~6 V Input diode current IIK -20 mA Output diode current IOK -20 mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 300 (SM8) 200 (US8) mW Storage temperature Tstg -65~150 °C Lead temperature (10s) TL 260 °C SM8 US8 Type name Z 00 Lot No. WZ 00 VCC 2B 2A 1A GND 1B 1 2 3 4 2Y 1Y 8 7 6 5 |
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