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SST39VF160Q Datasheet(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST39VF160Q Datasheet(HTML) 9 Page - Silicon Storage Technology, Inc |
9 / 23 page 9 © 1998 Silicon Storage Technology, Inc. 329-09 11/98 16 Megabit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND(1) Endurance 10,000 Cycles MIL-STD-883, Method 1033 TDR(1) Data Retention 100 Years JEDEC Standard A103 VZAP_HBM(1) ESD Susceptibility 1000 Volts JEDEC Standard A114 Human Body Model VZAP_MM(1) ESD Susceptibility 200 Volts JEDEC Standard A115 Machine Model ILTH(1) Latch Up 100 + IDD mA JEDEC Standard 78 Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 329 PGM T12.2 TABLE 10: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum (TSOP) Maximum (TFBGA) CI/O(1) I/O Pin Capacitance VI/O = 0V 12 pF 12pF CIN(1) Input Capacitance VIN = 0V 6 pF 6pF Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 329 PGM T11.1 329 PGM T10.2 TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ(1) Power-up to Read Operation 100 µs TPU-WRITE(1) Power-up to Program/Erase 100 µs Operation TABLE 8: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V AND VDDQ = VDD OR 4.5V - 5.5V Limits Symbol Parameter Min Max Units Test Conditions IDD Power Supply Current CE#=OE#=VIL,WE#=VIH , all I/Os open, Read 20 mA Address input = VIL/VIH, at f=1/TRC Min. Program and Erase 25 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max. ISB Standby VDD Current 10 µA CE#=VIHC, VDD = VDD Max. IALP Auto Low Power Current 10 µA CE#=VIHC, VDD = VDD Max. ILI Input Leakage Current 1 µA VIN =GND to VDD, VDD = VDD Max. ILO Output Leakage Current 1 µA VOUT =GND to VDD, VDD = VDD Max. VIL Input Low Voltage 0.8 V VDD = VDD Max. VILC Input Low Voltage (CMOS) 0.3 V VDD = VDD Max. VIH Input High Voltage 2.0 V VDD = VDD Max. VIHC Input High Voltage (CMOS) VDD-0.3 V VDD = VDD Max. VOL Output Low Voltage 0.4 V IOL = 100 µA, VDD = VDD Min. VOH Output High Voltage 2.4 V IOH = -100 µA, VDD = VDD Min. VH Supervoltage for A9 pin 11.4 12.6 V CE# = OE# =VIL, WE# = VIH IH Supervoltage Current 200 µA CE# = OE# = VIL, WE# = VIH, A9 = VH Max. for A9 pin 329 PGM T9.8 |
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