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SST39VF160Q-70-4C-BK Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc

Part # SST39VF160Q-70-4C-BK
Description  16 Megabit (1M x 16-Bit) Multi-Purpose Flash
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39VF160Q-70-4C-BK Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc

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© 1998 Silicon Storage Technology, Inc.
329-09 11/98
16 Megabit Multi-Purpose Flash
SST39VF160Q / SST39VF160
Advance Information
TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TBP
Word Program time
10
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
0
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH (1)
WE# Pulse Width High
30
ns
TCPH (1)
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH (1)
Data Hold Time
0
ns
TIDA (1)
Software ID Access and Exit Time
150
ns
TSE
Sector Erase
4
ms
TBE
Block Erase
10
ms
TSCE
Chip Erase
20
ms
Note: (1) This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
329 PGM T14.2
AC CHARACTERISTICS
TABLE 12: SST39VF160Q/VF160 READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VF160Q/VF160-70 SST39VF160Q/VF160-90
Symbol
Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
30
40
ns
TCLZ(1)
CE# Low to Active Output
0
0
ns
TOLZ(1)
OE# Low to Active Output
0
0
ns
TCHZ(1)
CE# High to High-Z Output
20
30
ns
TOHZ(1)
OE# High to High-Z Output
20
30
ns
TOH(1)
Output Hold from Address Change
0
0
ns
329 PGM T13.1


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