FLASH MEMORY

11

K9F2808U0C

AC Timing Characteristics for Command / Address / Data Input

NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.

Parameter

Symbol

K9F2808U0C

Unit

CLE Set-up Time

0-

ns

CLE Hold Time

10

-

ns

CE Setup Time

0-

ns

CE Hold Time

10

-

ns

WE Pulse Width

25

-ns

ALE Setup Time

0-

ns

ALE Hold Time

10

-

ns

Data Setup Time

20

-

ns

Data Hold Time

10

-

ns

Write Cycle Time

50

-

ns

WE High Hold Time

15

-

ns

AC Characteristics for Operation

NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

2. To break the sequential read cycle, CE must be held high for longer time than tCEH.

3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.

Parameter

Symbol

K9F2808U0C

Unit

Data Transfer from Cell to Register

-10

µs

ALE to RE Delay

10

-

ns

CLE to RE Delay

10

-

ns

Ready to RE Low

20

-

ns

RE Pulse Width

25

-

ns

WE High to Busy

-

100

ns

Read Cycle Time

50

-

ns

CE Access Time

-45

ns

RE Access Time

-30

ns

RE High to Output Hi-Z

-

30

ns

CE High to Output Hi-Z

-20

ns

RE or CE High to Output hold

15

-

ns

RE High Hold Time

15

-

ns

Output Hi-Z to RE Low

0-

ns

WE High to RE Low

60

-

ns

-

µs

K9F2808U0C-

Y,P,V,F only

Last RE High to Busy

(at sequential read)

-

100

ns

CE High to Ready(in case of interception by

CE at read)

-

ns

100

-

ns