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BZX84C15ET1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BZX84C15ET1 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  BZX84C2V4ET1 Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ Maximum Temperature Coefficient of VZ C Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator IF V I IR IZT VR VZ VF ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device VZ1 (V) @IZT1 =5mA (Note 4) ZZT1 ( W) @IZT1 VZ2 (V) @IZT2 =1mA (Note 4) ZZT2 ( W) @IZT2 VZ3 (V) @IZT3=20 mA (Note 4) ZZT3 ( W) @ Max Reverse Leakage Current qVZ (mV/k) @ IZT1=5 mA C (pF) @ VR =0 Device Device Mark- ing Min Nom Max @ IZT1 = 5 mA Min Max @ IZT2 = 1 mA Min Max @ IZT3= 20 mA VR (V) IR mA @ Min Max VR = 0 f = 1 MHz BZX84C3V3ET1 BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450 BZX84C4V7ET1 BA9 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260 BZX84C5V1ET1 BB1 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 BZX84C5V6ET1 BB2 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 BZX84C6V2ET1, G* BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 BZX84C6V8ET1 BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 BZX84C7V5ET1 BB5 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 BZX84C10ET1 BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 BZX84C12ET1 BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 BZX84C15ET1 BC3 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 BZX84C16ET1 BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 BZX84C18ET1 BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C24ET1 BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device VZ1 Below @IZT1 =2mA ZZT1 Below @IZT1 VZ2 Below @IZT2 = 0.1 mA ZZT2 Below @IZT4 VZ3 Below @IZT3 =10 m A ZZT3 Below @IZT3 Max Reverse Leakage Current qVZ (mV/k) Be- low @ IZT1 = 2 mA C (pF) @ VR =0 Device Device Mark- ing Min Nom Max @ IZT1 = 2 mA Min Max @ IZT4 = 0.5 mA Min Max @ IZT3 = 10 mA VR (V) IR mA @ Min Max = 0 f = 1 MHz BZX84C27ET1 BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 BZX84C43ET1 BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 * The “G” suffix indicates Pb−Free package available. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C |
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