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IRFR420A Datasheet(PDF) 2 Page - International Rectifier |
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IRFR420A Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR420A/IRFU420A 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 1.4 ––– ––– SVDS = 50V, ID = 1.5A Qg Total Gate Charge ––– ––– 17 ID = 2.5A Qgs Gate-to-Source Charge ––– ––– 4.3 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.1 ––– VDD = 250V tr Rise Time ––– 12 ––– ID = 2.5A td(off) Turn-Off Delay Time ––– 16 ––– RG = 21Ω tf Fall Time ––– 13 ––– RD = 97Ω,See Fig. 10 Ciss Input Capacitance ––– 340 ––– VGS = 0V Coss Output Capacitance ––– 53 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 2.7 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 15 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 28 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V trr Reverse Recovery Time ––– 330 500 ns TJ = 25°C, IF = 2.5A Qrr Reverse RecoveryCharge ––– 760 1140 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 3.3 10 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 3.0 Ω VGS = 10V, ID = 1.5A VGS(th) Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.5A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 45mH RG = 25Ω, IAS = 2.5A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS |
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