K4S561632E-UC60 datasheet(9/14 Pages) SAMSUNG

Part #	K4S561632E-UC60

Description	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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SDRAM 256Mb E-die (x4, x8, x16)

CMOS SDRAM

Rev. 1.3 August 2004

SDRAM 256Mb E-die (x4, x8, x16)

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit Note

60

75

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

140

90

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

2

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

2

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

ICC2NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tCC = ∞

Input signals are stable

10

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

6

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

6

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

25

mA

ICC3NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tCC = ∞

Input signals are stable

25

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4banks Activated.

tCCD = 2CLKs

170

130

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

200

180

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C

3

mA

3

L

1.5

mA

4

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S561632E-UC

4. K4S561632E-UL

5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

Notes :

DC CHARACTERISTICS (x16)

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