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K6F8016U6D Datasheet(PDF) 7 Page - Samsung semiconductor |
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K6F8016U6D Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 9 page K6F8016U6D Family Revision 1.0 January 2005 7 CMOS SRAM TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled) Address Data Valid UB, LB WE Data in Data out High-Z High-Z tWC tCW(2) tAW tBW tWP(1) tDH tDW tWR(4) tAS(3) CS1 CS2 TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) Address CS1 Data Undefined UB, LB WE Data in Data out tWC tCW(2) tWR(4) tAW tBW tWP(1) tAS(3) tDH tDW tWHZ tOW High-Z High-Z Data Valid CS2 |
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