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2SC5814 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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2SC5814 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
2 / 5 page 〈Transistor〉 DEVELOPING 2SC5814,2SC5815,2SC5816,2SC5817 For Low Frequency Amplify Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V (BR)CEO C to E break down voltage I C=100uA,RBE=∞ 60 V I CBO Collector cut off current V CB=60V,I E =0mA 0.5 μA IEBO Emitter cut off current V EB=4V,I C=0mA 0.5 μA hFE * DC forward current gain VCE=6V,IC=1mA 120 560 - hFE DC forward current gain VCE=6V,IC=0.1mA 70 - VCE(sat) C to E saturation voltage IC=30mA,I B=1.5mA 0.3 V fT Gain band width product VCE=6V,IE=-10mA 200 MHz Cob Collector output capacitance VCB=6V,IE=0mA,f=1MHz 1.5 pF * It shows h FE classification in right table. Item Q R S h FE 120∼270 180∼390 270∼560 Marking EQ ER ES Item E F h FE 150∼300 250∼500 Marking EE EF ISAHAYA ELECTRONICS CORPORATION |
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