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2SC5814 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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2SC5814 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 5 page  〈Transistor〉 DEVELOPING 2SC5814，2SC5815，2SC5816，2SC5817 For Low Frequency Amplify Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V (BR)CEO C to E break down voltage I C=100uA，RBE=∞ 60 V I CBO Collector cut off current V CB=60V，I E =0mA 0.5 μA IEBO Emitter cut off current V EB=4V，I C=0mA 0.5 μA ｈＦＥ ＊ DC forward current gain VCE=6V，IC=1mA 120 560 - ｈＦＥ DC forward current gain VCE=6V，IC=0.1mA 70 - VCE(sat) C to E saturation voltage IC=30mA，I B=1.5mA 0.3 V fT Gain band width product VCE=6V，IE=-10mA 200 MHz Cob Collector output capacitance VCB=6V，IE=0mA，f=1MHz 1.5 pF ＊ It shows ｈ ＦＥ classification in right table. Item Q R S ｈ ＦＥ 120∼270 180∼390 270∼560 Marking EQ ER ES Item E F ｈ ＦＥ 150∼300 250∼500 Marking EE EF ISAHAYA ELECTRONICS CORPORATION |
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