Plastic High Power Silicon

Transistor

. . . designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

hFE = 30 (Min) @ IC = 2.0 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

80

Vdc

Collector–Base Voltage

VCBO

80

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Device Dissipation TC = 25_C

Derate above 25

_C

PD

90

720

Watts

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

1.39

_C/W

© Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 1

1

Publication Order Number:

BD809/D

BD809

BD810

10 AMPERE

POWER TRANSISTORS

PNP SILICON

60, 80 VOLTS

90 WATTS

CASE 221A–09

TO–220AB

NPN

PNP

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

3

4