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BD810 Datasheet(PDF) 1 Page - ON Semiconductor |
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BD810 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page Plastic High Power Silicon Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation TC = 25_C Derate above 25 _C PD 90 720 Watts mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 1.39 _C/W ON Semiconductor) © Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 1 1 Publication Order Number: BD809/D BD809 BD810 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS CASE 221A–09 TO–220AB NPN PNP STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 4 |
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