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HY64UD16322A-I Datasheet(PDF) 2 Page - Hynix Semiconductor |
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HY64UD16322A-I Datasheet(HTML) 2 Page - Hynix Semiconductor |
2 / 11 page HY64UD16322A Series 2 Revision 1.1 May. 2003 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. 2 2M x 16 bit Low M x 16 bit Low Low Power 1T/1C Low Power 1T/1C SRAM SRAM DESCRIPTION The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16322A adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The HY64UD16322A operates in the extended range of temperature and supports a wide operating voltage range. The HY64UD16322A also supports the deep power down mode for a super low standby current. The HY64UD16322A delivers the high-density low power SRAM capability to the high-speed low power system. • CMOS Process Technology • 2M x 16 bit Organization • TTL compatible and Tri-state outputs • Deep Power Down : Memory cell data hold invalid • Standard pin configuration : 48-FBGA(6mmX8mm) • Data mask function by /LB, /UB • Separated I/O Power Supply : Vddq PRODUCT FAMILY FEATURES Note 1. tCS - /UB,/LB=High : Chip Deselect. PIN DESCRIPTION Pin Name Pin Function Pin Name Pin Function /CS1 Chip Select IO1~IO8 Lower Data Inputs/Outputs /WE Write Enable A0~A20 Address Inputs /OE Output Enable Vdd Power Supply for Internal Circuit /LB Lower Byte(I/O1~I/O8) Vss Ground /UB Upper Byte(I/O9~I/O16) CS2 Deep Power Down DNU Do Not Use IO9~IO16 Upper Data Inputs/Outputs Vddq Power Supply for I/O PIN CONNECTION (Top View) /LB /OE A0 A1 A2 CS2 IO9 /UB A3 A4 /CS1 IO1 IO10 IO11 A5 A6 IO2 IO3 Vss IO12 A17 A7 IO4 Vdd Vddq IO13 DNU A16 IO5 Vss IO15 IO14 A14 A15 IO6 IO7 IO16 A19 A12 A13 /WE IO8 A18 A8 A9 A10 A11 A20 BLOCK DIAGRAM ROW DECODER MEMORY ARRAY 2,048K x 16 CONTROL LOGIC A0 A20 IO1 IO8 IO9 IO16 /CS1 CS2 /OE /LB /UB /WE Product No. Voltage [V] Speed tRC[ns] Temp. [ °C] (ISB1,Max) (IDPD,Max) (ICC2,Max) Power Dissipation Mode HY64UD16322A-DF70I 2.7~3.3 70 -40~85 100µA 2µA 25mA 1CS with /UB,/LB:tCS1 HY64UD16322A-DF70E 2.7~3.3 70 -25~85 100µA 2µA 25mA 1CS with /UB,/LB:tCS1 |
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