BDX54B datasheet(2/6 Pages) ONSEMI

Part #	BDX54B

Description	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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2 / 6 page

BDX53B BDX53C BDX54B BDX54C

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

BDX53B, BDX54B

BDX53C, BDX54C

VCEO(sus)

80

100

—

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

BDX53B, BDX54B

(VCE = 50 Vdc, IB = 0)

BDX53C, BDX54C

ICEO

—

0.5

mAdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

BDX53B, BDX54B

(VCB = 100 Vdc, IE = 0)

BDX53C, BDX54C

ICBO

—

0.2

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

750

—

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

VCE(sat)

—

2.0

4.0

Vdc

Base–Emitter Saturation Voltage

(IC = 3.0 Adc, IC = 12 mA)

VBE(sat)

—

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

BDX53B, 53C

BDX54B, 54C

Cob

—

300

200

pF

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

Figure 2. Switching Time Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

3.0

0.7

0.5

0.3

0.2

0.05

0.2

0.3

0.7

3.0

10

td @ VBE(off) = 0 V

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

0.07

1.0

5.0

ts

tr

0.1

1.0

2.0

0.5

2.0

7.0

0

VCC

– 30 V

SCOPE

TUT

+ 4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25

µs

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+ 8.0 V

V1

APPROX

–12 V

[ 8.0 k

[ 120

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities

RB

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