RD28F3208C3T90 datasheet(1/70 Pages) INTEL

Part #	RD28F3208C3T90

Description	3 VOLT INTEL AdvancedBootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

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Manufacturer	INTEL [Intel Corporation]

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3 Volt Intel® Advanced+ Boot Block

Flash Memory (C3) Stacked-Chip Scale

Package Family

Datasheet

Product Features

The 3 Volt Intel

® Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package

(Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3

Stacked-CSP memory device incorporates flash memory and static RAM in one package with

low voltage capability to achieve the smallest system memory solution form-factor together with

high-speed, low-power operations. The C3 Stacked-CSP memory device offers a protection

register and flexible block locking to enable next generation security capability. Combined with

the Intel® Flash Data Integrator (Intel® FDI) software, the C3 Stacked-CSP memory device

provides a cost-effective, flexible, code plus data storage solution.

■

Flash Memory Plus SRAM

—Reduces Memory Board Space

Required, Simplifying PCB Design

Complexity

■

Stacked-Chip Scale Package (Stacked-

CSP) Technology

— Smallest Memory Subsystem Footprint

—Area : 8 x 10 mm for 16Mbit (0.13 µm)

Flash + 2Mbit or 4Mbit SRAM

—Area : 8 x 12 mm for 32Mbit (0.13 µm)

Flash + 4Mbit or 8Mbit SRAM

— Height : 1.20 mm for 16Mbit (0.13 µm)

Flash + 2Mbit or 4Mbit SRAM and

32Mbit (0.13um) Flash + 8Mbit SRAM

— Height : 1.40 mm for 32Mbit (0.13 µm)

Flash + 4Mbit SRAM

—This Family also includes 0.25 µm and

0.18 µm technologies

■

Advanced SRAM Technology

— 70 ns Access Time

— Low Power Operation

— Low Voltage Data Retention Mode

■

Intel

® Flash Data Integrator (FDI)

Software

— Real-Time Data Storage and Code

Execution in the Same Memory Device

— Full Flash File Manager Capability

■

Advanced+ Boot Block Flash Memory

—70 ns Access Time at 2.7 V

— Instant, Individual Block Locking

—128 bit Protection Register

—12 V Production Programming

—Ultra Fast Program and Erase Suspend

— Extended Temperature –25 °C to +85 °C

■

Blocking Architecture

—Block Sizes for Code + Data Storage

—4-Kword Parameter Blocks (for data)

— 64-Kbyte Main Blocks (for code)

— 100,000 Erase Cycles per Block

■

Low Power Operation

— Async Read Current: 9 mA (Flash)

— Standby Current: 7 µA (Flash)

— Automatic Power Saving Mode

■

Flash Technologies

— 0.25 µm ETOX™ VI, 0.18 µm ETOX™

VII and 0.13 µm ETOX™ VIII Flash

Technologies

— 28F160xC3, 28F320xC3

252636-001

February, 2003

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the lat-

est datasheet before finalizing a design.

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