© Semiconductor Components Industries, LLC, 2005

February, 2005 − Rev. 4

1

Publication Order Number:

BFR30LT1/D

BFR30LT1, BFR31LT1

JFET Amplifiers

N−Channel

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain − Source Voltage

25

Vdc

Gate − Source Voltage

25

Vdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

1. Device mounted on FR4 glass epoxy printed circuit board using the

recommended footprint.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

http://onsemi.com

Device

Package

BFR30LT1

SOT−23

3000/Tape & Reel

SOT−23

CASE 318

STYLE 10

MARKING

DIAGRAM

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1 DRAIN

2 SOURCE

3

GATE

1

2

3

BFR30LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

BFR31LT1

SOT−23

3000/Tape & Reel

1

MxM

x

= 1 or 2

M

= Date Code

BFR31LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel