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K6R1008V1D-KI10 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6R1008V1D-KI10 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page PRELIMINARY Rev. 3.0 - 1 - July 2004 PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Rev.No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 Rev. 2.0 Rev. 3.0 Remark Preliminary Preliminary Preliminary Final Final Final History Initial release with Preliminary. Current modify 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. 1. Final datasheet release. 2. Delete UB,LB releated AC characteristics and timing diagram. 1. Delete 12ns speed bin. 1. Add the Lead Free Package type. Item Previous Current ICC(Industrial) 10ns 85mA 75mA 12ns 75mA 65mA Draft Data June. 8. 2001 September. 9. 2001 December. 18. 2001 June. 19. 2002 July. 8. 2002 July. 26, 2004 |
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