BUH51 datasheet(2/10 Pages) ONSEMI

Part #	BUH51

Description	POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS

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BUH51

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

500

550

Vdc

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

VCBO

800

950

Vdc

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

VEBO

10

12.5

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ICEO

100

µAdc

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICES

100

1000

µAdc

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICBO

100

1000

µAdc

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

VBE(sat)

0.92

0.8

1.1

Vdc

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

VCE(sat)

0.3

0.32

0.5

0.6

Vdc

DC Current Gain (IC = 1 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

hFE

8

6

10

8

—

DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

5

4

7.5

6.2

—

DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

10

8

14

13

—

DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

14

18

20

25

—

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 3

µs after

rising IB1 reaches

90% of final IB1

IC = 1 Adc, IB1 = 0.2 Adc

VCC = 300 V

@ TC = 25°C

VCE(dsat)

1.7

V

Dynamic Saturation

Voltage:

Determined 3

µs after

rising IB1 reaches

90% of final IB1

IC = 1 Adc, IB1 = 0.2 Adc

VCC = 300 V

@ TC = 125°C

6

V

Determined 3

µs after

rising IB1 reaches

90% of final IB1

IC = 2 Adc, IB1 = 0.4 Adc

VCC = 300 V

@ TC = 25°C

5.1

V

B1 reaches

90% of final IB1

IC = 2 Adc, IB1 = 0.4 Adc

VCC = 300 V

@ TC = 125°C

15

V

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

23

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

34

100

pF

Input Capacitance

(VEB = 8 Vdc, f = 1 MHz)

Cib

200

500

pF

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