BUL146 BUL146F

5

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

3

130

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Cross–Over Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

Figure 17. Forward Bias Power Derating

110

60

5

15

250

150

50

100

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7

6

0

0

200

1,0

0,8

0,2

0,0

20

TC, CASE TEMPERATURE (°C)

80

140

160

1

0.01

3

600

800

4

100

1000

DC (BUL146)

5 ms

VBE(off)

TC ≤ 125°C

IC/IB ≥ 4

LC = 500 µH

0,6

0,4

6

7

8

9

10

11

12

13

14

70

80

90

100

120

IC = 3 A

IC = 1.3 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

3

5

15

4

6

7

8

9

10

11

12

13

14

200

100

IC = 3 A

IC = 1.3 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

10

0.1

1 ms

10

µs

1

µs

400

2

1

4

5

0 V

–1, 5 V

– 5 V

40

60

100

120

SECOND BREAKDOWN

DERATING

THERMAL DERATING

DC (BUL146F)

GUARANTEED SAFE OPERATING AREA INFORMATION

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 15 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second break-

down limitations do not derate the same as thermal limita-

tions. Allowable current at the voltages shown in Figure 15

may be found at any case temperature by using the appropri-

ate curve on Figure 17. TJ(pk) may be calculated from the

data in Figure 20 and 21. At any case temperatures, thermal

limitations will reduce the power that can be handled to val-

ues less than the limitations imposed by second breakdown.

For inductive loads, high voltage and current must be sus-

tained simultaneously during turn–off with the base–to–emit-

ter junction reverse–biased. The safe level is specified as a

reverse–biased safe operating area (Figure 16). This rating

is verified under clamped conditions so that the device is

never subjected to an avalanche mode.

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

EXTENDED

SOA