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RC4190 Datasheet(PDF) 2 Page - Raytheon Company |
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RC4190 Datasheet(HTML) 2 Page - Raytheon Company |
2 / 25 page PRODUCT SPECIFICATION RC4190 2 Absolute Maximum Ratings (beyond which the device may be damaged)1 Note: 1. Functional operation under any of these conditions is NOT implied. Operating Conditions Parameter Min Typ Max Units Supply Voltage (Without External Transistor) RM4190 30 V RC4190 24 V PDTA < 50 °C SOIC 300 mW PDIP 468 mW CerDIP 833 mW Operating Temperature RM4190 -55 125 °C RC4190 0 70 °C Storage Temperature -65 150 °C Junction Temperature SOIC, PDIP 125 °C CerDIP 175 °C Switch Current Peak 375 mA For TA > 50 °C Derate at SOIC 4.17 mW/ °C PDIP 6.25 mW/ °C CerDIP 8.33 mW/ °C Parameter Min Typ Max Units θJC Thermal resistance CerDIP 45 °C/W θJA Thermal resistance SOIC 200 °C/W PDIP 160 °C/W CerDIP 120 °C/W Pin Assignments LBR CX GND LX LBD VFB IC +VS 8 65-3464-02 7 6 5 1 2 3 4 Pin Definitions Pin Name Pin Number Pin Function Description LBR 1 Low Battery (Set) Resistor CX 2 Timing Capacitor Gnd 3 Ground LX 4 External Inductor +VS 5 Positive Supply Voltage IC 6 Reference Set Current VFB 7 Feedback Voltage LBD 8 Low Battery Detector Output |
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