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HX6356
6
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
CE
TAVAVR
TAVQV
TAXQX
TSLQV
TSLQX
TSHQZ
TEHQX
TEHQV
TGLQX
TGLQV
TGHQZ
TELQZ
ADDRESS
(NWE = high)
DATA OUT
READ CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading C
L >50 pF, or equivalent
capacitive output loading C
L=5 pF for TSHQZ, TELQZ TGHQZ. For CL >50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=5.0 V, TA=25
°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, post total dose at 25
°C.
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