C106B datasheet(3/6 Pages) ONSEMI

Part #	C106B

Description	Sensitive Gate Silicon Controlled Rectifiers

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C106 Series

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)

TJ = 25°C

TJ = 110°C

IDRM, IRRM

−

10

100

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage (Note 3)

(ITM = 4 A)

VTM

−

2.2

V

Gate Trigger Current (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms)

TJ = 25°C

TJ = −40°C

IGT

−

15

35

200

500

mA

Peak Reverse Gate Voltage (IGR = 10 mA)

VGRM

−

6.0

V

Gate Trigger Voltage (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms)

TJ = 25°C

TJ = −40°C

VGT

0.4

0.5

0.60

0.75

0.8

1.0

V

Gate Non−Trigger Voltage (Continuous dc) (Note 4)

(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)

VGD

0.2

−

V

Latching Current

(VAK = 12 V, IG = 20 mA)

TJ = 25°C

TJ = −40°C

IL

−

0.20

0.35

5.0

7.0

mA

Holding Current (VD = 12 Vdc)

(Initiating Current = 20 mA, Gate Open)

TJ = 25°C

TJ = −40°C

TJ = +110°C

IH

−

0.19

0.33

0.07

3.0

6.0

2.0

mA

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Off−State Voltage

(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

dv/dt

−

8.0

−

V/

ms

3. Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

4. RGK is not included in measurement.

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

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