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IS93C56-3PI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS93C56-3PI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
4 / 10 page 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 04/26/01 IS93C56-3 ISSI® ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VGND Voltage with Respect to GND –0.3 tp +6.5 V TBIAS Temperature Under Bias (IS93C56-3) 0 to +70 °C TBIAS Temperature Under Bias (IS93C56-3I) –40 to +85 °C TSTG Storage Temperature –65 to +125 °C Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 5 pF COUT Output Capacitance VOUT = 0V 5 pF OPERATING RANGE Range Ambient Temperature VCC Commercial 0°C to +70°C 2.7V to 6.0V Industrial –40°C to +85°C 2.7V to 6.0V FIGURE 1. AC TEST CONDITIONS 800 Ω 100 pF +2.08V DOUT Vcc = 5.0V |
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