IS41C4100

IS41LV4100

Integrated Silicon Solution, Inc. — 1-800-379-4774

5

PRELIMINARY INFORMATION

Rev. 00A

09/10/01

Symbol

Parameters

Rating

Unit

Voltage on Any Pin Relative to GND

5V

–1.0 to +7.0

V

3.3V

-0.5 to 4.6

V

Supply Voltage

5V

–1.0 to +7.0

V

3.3V

-0.5 to 4.6

V

Output Current

50

mA

Power Dissipation

1

W

Commercial Operation Temperature

0 to +70

°C

Industrail Temperature

–40 to +85

°C

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Symbol

Parameter

Max.

Unit

Input Capacitance: A0-A9

5

pF

Input Capacitance:

RAS, CAS, WE, OE

7pF

Data Input/Output Capacitance: I/O0-I/O3

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

5V

4.5

5.0

5.5

V

3.3V

3.0

3.3

3.6

Input High Voltage

5V

2.4

—

V

3.3V

2.0

—

Input Low Voltage

5V

–1.0

—

0.8

V

3.3V

–0.3

—

0.8

Commercial Ambient Temperature

0

—

70

°C

Industrail Ambient Temperature

–40

—

85

°C