MRF6S21050LR3 MRF6S21050LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

Drain Efficiency — 27.7%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Derate above 25°C

151

0.86

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Document Number: MRF6S21050L

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

MRF6S21050LR3

MRF6S21050LSR3

2110-2170 MHz, 11.5 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465F-04, STYLE 1

NI-400S

MRF6S21050LSR3

CASE 465E-04, STYLE 1

NI-400

MRF6S21050LR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.