© Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 0

1

Publication Order Number:

DTC114E/D

DTC114E SERIES

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the TO–92

package which is designed for through hole applications.

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

Total Power Dissipation

Derate above 25

°C

350

2.81

mW

mW/

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to

Ambient (surface mounted)

357

°C/W

Operating and Storage

Temperature Range

–55 to

+150

°C

Maximum Temperature for

Soldering Purposes,

Time in Solder Bath

260

10

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

10

22

47

10

10

4.7

1.0

2.2

4.7

4.7

10

22

47

47

∞

∞

1.0

2.2

4.7

47

5000/Box

1. Device mounted on a FR–4 glass epoxy printed circuit board using the

minimum recommended footprint.

http://onsemi.com

CASE 29

TO–92 (TO–226)

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

NPN SILICON

BIAS RESISTOR

TRANSISTOR

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER