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DTC144E Datasheet(PDF) 1 Page - ON Semiconductor |
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DTC144E Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 12 page © Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 0 1 Publication Order Number: DTC114E/D DTC114E SERIES Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25°C (1.) Derate above 25 °C PD 350 2.81 mW mW/ °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (surface mounted) RθJA 357 °C/W Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C Maximum Temperature for Soldering Purposes, Time in Solder Bath TL 260 10 °C Sec DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 5000/Box 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com CASE 29 TO–92 (TO–226) STYLE 1 Preferred devices are recommended choices for future use and best overall value. NPN SILICON BIAS RESISTOR TRANSISTOR 1 2 3 COLLECTOR 3 2 BASE 1 EMITTER |
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