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RA07N3340M-01 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # RA07N3340M-01
Description  330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA07N3340M-01 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA07N3340M
RA07N3340M
MITSUBISHI ELECTRIC
5 April 2004
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
2
4
6
8
10
12
14
1
1.5
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
7
Pout
f=330MHz,
VDD=9.6V,
Pin=20mW
IDD
0
5
10
15
20
25
2
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
Pout
f=400MHz,
VGG=3.5V,
Pin=20mW
IDD
0
2
4
6
8
10
12
14
1
1.5
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
7
Pout
f=360MHz,
VDD=9.6V,
Pin=20mW
IDD
0
2
4
6
8
10
12
14
1
1.5
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
7
Pout
f=400MHz,
VDD=9.6V,
Pin=20mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50
Ω, unless otherwise specified)


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