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ZXMN10B08E6 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN10B08E6 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXMN10B08E6 SEMICO NDUC TORS PROVISIONAL ISSUE B - MAY 2003 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 100 V Gate Source Voltage VGS 20 V Continuous Drain Current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) ID 1.9 1.5 1.6 A Pulsed Drain Current (c) IDM 9A Continuous Source Current (Body Diode) (b) IS 2.5 A Pulsed Source Current (Body Diode) (c) ISM 9A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS. |
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