IRHNA57160, JANSR2N7469U2

Pre-Irradiation

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.5

RthJ-PCB

Junction-to-PC board

—

1.6

—

soldered to a 2” square copper-clad board

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

75*

ISM

Pulse Source Current (Body Diode)

À

—

—

300

VSD Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

300

nS

Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

2.2

µCVDD ≤ 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

* Current is limited by package

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.115

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.012

Ω

VGS = 12V, ID = 69A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

42

—

—

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 80V ,VGS=0V

——

25

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

160

VGS =12V, ID = 45A

Qgs

Gate-to-Source Charge

—

—

55

nC

VDS = 50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

65

Turn-On Delay Time

—

—

35

VDD = 50V, ID = 45A,

tr

Rise Time

—

—

125

VGS =12V, RG = 2.35Ω

Turn-Off Delay Time

—

—

75

tf

Fall Time

—

—

50

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

6440

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

1660

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

60

—

nA

Ã

nH

ns

µA

Measured from the center of

drain pad to center of source pad