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IS62LV5128LL-70BI Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

Part # IS62LV5128LL-70BI
Description  512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62LV5128LL-70BI Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. D
05/04/01
IS62LV5128LL
ISSI®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power)
-70
-85
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
70
85
ns
tSCE
CE to Write End
65
70
ns
tAW
Address Setup Time to Write End
65
70
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup Time
0
0
ns
tPWE(4)
WE Pulse Width
60
60
ns
tSD
Data Setup to Write End
30
35
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE(2)
WE LOW to High-Z Output
33
35
ns
tLZWE(2)
WE HIGH to Low-Z Output
5
5
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0.4Vto2.2VandoutputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Theinternalwritetimeisdefinedbytheoverlapof
CELOWandWELOW. AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecangoinactivetoterminatethe
Write. TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatestheWrite.
4. Tested with
OE HIGH.
DATA-IN VALID
DATA UNDEFINED
tWC
tSCE
tAW
tHA
tPWE(4)
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CE
WE
DOUT
DIN
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE = HIGH or LOW)


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