ELECTRICAL CHARACTERISTICS (Continued)

XC2164A51T, V Fundamental

3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80

/INH=Open, Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

/INH= " L ", Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

XC2164A51M, V

XC2164A51T

XC2164A51M, V

XC2164A51T

* note 1 : the values for Cg, Cd are the designed values.

Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)

OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE

VDD = 3.3V

VDD = 5.0V

- 130

Ω

- 220

Ω

- 660

Ω

- 760

Ω

- 250

Ω

3.30

2.5

NEGATIVE RESISTANCE VALUE

± 1.2 ppm

VDD = 5.0 V,

±10%

VDD = 3.3 V,

±10%

± 4.3 ppm

± 4.5 ppm

CMOS : 2.97V, IOH= - 8mA

- 150

Ω

SYMBOL

± 9.4 ppm

M

V

T

± 2.1 ppm

± 7.0 ppm

Operating Supply Voltage

VDD

2.5

"H" Level Input Voltage

VIH

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

3.63

V

V

"L" Level Input Voltage

VIL

0.4

V

"H" Level Output Voltage

VOH

2.4

"L" Level Output Voltage

VOL

CMOS : 2.97V, IOH=8mA

( 6.5 )

V

0.4

V

( 8 )

mA

Consumption Current 2

IDD2

2

Consumption Current 1

IDD1

5

4

µA

2

( 4 )

( 4 )

Input pull up resistance 1

Rup1

/INH="L"

1.0

2.0

4.0

M

Ω

Input pull up resistance 2

Rup2

/INH=0.7VDD

35

70

140

k

Ω

Internal Oscillation Capacitance

Cg

( * )

Cd

( * )

35

pF

20

35

Internal Oscillation Feedback Resistance

Rf

10

µA

20

7.0

XC2164 Series

ICs for use with Crystal Oscillators

M

Ω

Output Diable Leakage Current

IOZ

/INH="L"

Semiconductor Ltd.

5