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IDTQS32253SO Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDTQS32253SO Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 5 page 2 INDUSTRIALTEMPERATURERANGE IDTQS32253 HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX PIN CONFIGURATION SOIC/ QSOP TOP VIEW 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 EA S 1 I3A I2A I1A I0A Y A GN D V CC EB S 0 I3B I2B I1B I0B Y B S O 16-1 S O 16-7 ABSOLUTE MAXIMUM RATINGS (1) Symbol Description Max. Unit VTERM(2) Supply Voltage to Ground – 0.5 to +7 V VTERM(3) DC Switch Voltage VS – 0.5 to +7 V VTERM(3) DC Input Voltage VIN – 0.5 to +7 V VAC AC Input Voltage (pulse width ≤20ns) -3 V IOUT DC Output Current 120 mA PMAX Maximum Power Dissipation (TA = 85 °C) 0.5 W TSTG Storage Temperature – 65 to +150 °C NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Vcc Terminals. 3. All terminals except Vcc. CAPACITANCE (TA = +25OC, f = 1.0MHz, VIN = 0V, VOUT = 0V) Pins Typ. Max. (1) Unit Control Pins 4 5 pF Quickswitch Channels Demux 5 7 pF (Switch OFF) Mux 14 16 pF NOTE: 1. This parameter is guaranteed but not production tested. PIN DESCRIPTION Pin Names I/O Description Ixx I Data Inputs S0, S1 I Select Inputs EA, EB I Enable Inputs YA, YB O Data Outputs FUNCTION TABLE(1) Enable Select Outputs EA EB S1 S0 YA YB Function H X X X Hi-Z X Disconnected X H X X X Hi-Z Disconnected LL L L I0A I0B S1 - 0 = 0 LL L H I1A I1B S1 - 0 = 1 LL H L I2A I2B S1 - 0 = 2 LL H H I3A I3B S1 - 0 = 3 NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don’t Care Z = High-Impedence |
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