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GA150TD120U Datasheet(PDF) 2 Page - International Rectifier |
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GA150TD120U Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  GA150TD120U 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 1139 1709 VCC = 400V, VGE = 15V Qge Gate - Emitter Charge (turn-on) — 192 288 nC IC = 171A Qgc Gate - Collector Charge (turn-on) — 377 566 TJ = 25°C td(on) Turn-On Delay Time — 414 — RG1 = 15Ω, RG2 = 0Ω tr Rise Time — 208 — ns IC = 150A td(off) Turn-Off Delay Time — 552 — VCC = 720V tf Fall Time — 342 — VGE = ±15V Eon Turn-On Switching Energy — 29 — mJ See Fig.17 through Fig.21 Eoff Turn-Off Switching Energy — 32 — Ets Total Switching Energy — 61 90 Cies Input Capacitance — 25630 — VGE = 0V Coes Output Capacitance — 1139 — pF VCC = 30V Cres Reverse Transfer Capacitance — 221 — ƒ = 1 MHz trr Diode Reverse Recovery Time — 186 — ns IC = 150A Irr Diode Peak ReverseCurrent — 133 — A R G1 = 15 Qrr Diode Recovery Charge — 12381 — nC RG2 = 0 di(rec)M/dt Diode Peak Rate of Fall of Recovery — 2524 — A/µs VCC = 720V During tb di/dt=1260A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 2.4 2.9 VGE = 15V, IC = 150A — 2.2 — V VGE = 15V, IC = 150A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 1.75 mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.75mA gfe Forward Transconductance — 201 — S VCE = 25V, IC = 150A ICES Collector-to-Emitter Leaking Current — — 2 mA VGE = 0V, VCE = 1200V —— 20 VGE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 2.7 3.5 V IF = 150A, VGE = 0V — 2.6 — IF = 150A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Details of note through are on the last page Ω Ω |
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