HM5113805F-6 datasheet(7/34 Pages) HITACHI

Part #	HM5113805F-6

Description	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HM5112805F-6, HM5113805F-6

7

Operation Table

RAS

CAS

WE

OE

I/O 0 to I/O 7

Operation

H

×××

High-Z

Standby

L

H

L

Dout

Read cycle

LL

L*

2

×

Din

Early write cycle

LL

L*

2

H

Din

Delayed write cycle

L

H to L

L to H

Dout/Din

Read-modify-write cycle

LH

××

High-Z

RAS-only refresh cycle

H to L

L

H

×

High-Z

CAS-before-RAS refresh cycle

L

H

High-Z

Read cycle (Output disabled)

Notes: 1. H: V

IH (inactive), L: VIL (active), ×: VIH or VIL

2. t

WCS ≥ 0 ns:

Early write cycle

t

WCS < 0 ns:

Delayed write cycle

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Terminal voltage on any pin relative to V

SS

V

T

–0.5 to V

CC + 0.5 (≤ 4.6 V (max))

V

Power supply voltage relative to V

SS

V

CC

–0.5 to +4.6

V

Short circuit output current

Iout

50

mA

Power dissipation

P

T

1.0

W

Storage temperature

Tstg

–55 to +125

°C

DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Notes

Supply voltage

V

CC

3.0

3.3

3.6

V

1, 2

V

SS

000

V

2

Input high voltage

V

IH

2.0

—

V

CC + 0.3

V

1

Input low voltage

V

IL

–0.3

—

0.8

V

1

Ambient temperature range

Ta

0

—

70

˚C

Notes: 1. All voltage referred to V

SS.

2. The supply voltage with all V

CC pins must be on the same level.

The supply voltage with all V

SS

pins must be on the same level.

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Similar Description - HM5113805F-6

Manufacturer	Part #	Datasheet	Description
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Elpida Memory	HM5112805FTD-5	270Kb / 31P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
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HM5113805F-6 Datasheet(PDF) 7 Page - Hitachi Semiconductor

HM5113805F-6 Datasheet(HTML) 7 Page - Hitachi Semiconductor

Similar Part No. - HM5113805F-6

Similar Description - HM5113805F-6

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