AS7C3513-20 datasheet(1/10 Pages) ALSC

Part #	AS7C3513-20

Description	5V/3.3V 32Kx6 CMOS SRAM

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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1 / 10 page

March 2001

®

AS7C513

AS7C3513

5V/3.3V 32K×16 CMOS SRAM

3/23/01; v.1.0

Alliance Semiconductor

P. 1 of 10

Features

• AS7C513 (5V version)

• AS7C3513 (3.3V version)

• Industrial and commercial temperature

• Organization: 32,768 words × 16 bits

• Center power and ground pins

•High speed

- 12/15/20 ns address access time

- 6,7,8 ns output enable access time

• Low power consumption: ACTIVE

- 800 mW (AS7C513) / max @ 12 ns

- 432 mW (AS7C3513) / max @ 12 ns

• Low power consumption: STANDBY

- 28 mW (AS7C513) / max CMOS

- 18 mW (AS7C3513) / max CMOS

• 2.0V data retention

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• 44-pin JEDEC standard package

-400 mil SOJ

-400 mil TSOP II

• ESD protection

≥ 2000 volts

• Latch-up current

≥ 200 mA

Logic block diagram

32K × 16

Array

OE

CE

WE

Column decoder

A0

A1

A2

A3

A4

A5

A7

VCC

GND

Control circuit

I/O0–I/O7

I/O8–I/O15

UB

LB

I/O

buffer

A6

Pin arrangement

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

I/O13

I/O12

GND

VCC

I/O11

I/O10

I/O9

I/O8

NC

A7

A8

A9

A10

NC

A0

CE

I/O0

I/O1

I/O2

I/O3

VCC

GND

I/O4

I/O5

I/O6

I/O7

WE

A14

A13

A12

44-Pin SOJ, TSOP II (400 mil)

21

22

A11

NC

UB

LB

I/O15

I/O14

2

A3

3

A2

4

A1

1

NC

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

43

42

41

44

A5

A6

OE

A4

Selection guide

Shaded areas indicate advance information.

AS7C513-12

AS7C3513-12

AS7C513-15

AS7C3513-15

AS7C513-20

AS7C3513-20

Unit

Maximum address access time

12

15

20

ns

Maximum output enable access time

5

7

9

ns

Maximum operating current

AS7C513

160

150

140

mA

AS7C3513

120

110

100

mA

Maximum CMOS standby current

AS7C513

5

mA

AS7C3513

5

mA

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