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IKP03N120H2 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKP03N120H2 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 15 page IKP03N120H2, IKB03N120H2 IKW03N120H2 Power Semiconductors 10 Rev. 2, Mar-04 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0V 200V 400V 600V 800V 0A 1A 2A 3A 10µs 100µs 1ms 10ms 10 -2K/W 10 -1K/W 10 0K/W single pulse 0.01 0.02 0.05 0.1 0.2 D =0.5 tp, PULSE WIDTH tP, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82Ω, Tj = 150 °C, Dynamic test circuit in Figure E) Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 0Ohm 100Ohm 200Ohm 300Ohm 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns T J=150°C T J=25°C 0Ohm 100Ohm 200Ohm 300Ohm 0.2uC 0.3uC 0.4uC 0.5uC 0.6uC T J=150°C T J=25°C RG, GATE RESISTANCE RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E) Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) R ,( K / W ) τ , (s) 1.9222 7.04E-04 0.5852 2.02E-04 0.7168 4.39E-03 C 1 = τ1/R1 R 1 R 2 C 2= τ2/R 2 |
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