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IKP03N120H2 Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # IKP03N120H2
Description  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKP03N120H2 Datasheet(HTML) 10 Page - Infineon Technologies AG

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IKP03N120H2,
IKB03N120H2
IKW03N120H2
Power Semiconductors
10
Rev. 2, Mar-04
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
0V
200V
400V
600V
800V
0A
1A
2A
3A
10µs
100µs
1ms
10ms
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
tp, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=82Ω, Tj = 150
°C,
Dynamic test circuit in Figure E)
Figure 22. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
0Ohm
100Ohm
200Ohm
300Ohm
40ns
60ns
80ns
100ns
120ns
140ns
160ns
180ns
T
J=150°C
T
J=25°C
0Ohm
100Ohm
200Ohm
300Ohm
0.2uC
0.3uC
0.4uC
0.5uC
0.6uC
T
J=150°C
T
J=25°C
RG, GATE RESISTANCE
RG, GATE RESISTANCE
Figure 23. Typical reverse recovery time
as a function of diode current slope
VR=800V, IF=3A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery
charge as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
R
,( K / W )
τ , (s)
1.9222
7.04E-04
0.5852
2.02E-04
0.7168
4.39E-03
C 1 =
τ1/R1
R 1
R 2
C 2=
τ2/R 2


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