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IKW03N120H2 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # IKW03N120H2
Description  HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW03N120H2 Datasheet(HTML) 9 Page - Infineon Technologies AG

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IKP03N120H2,
IKB03N120H2
IKW03N120H2
Power Semiconductors
9
Rev. 2, Mar-04
1µs
10µs
100µs
1ms
10ms
100ms
10
-2K/W
10
-1K/W
10
0K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
0nC
10nC
20nC
30nC
0V
5V
10V
15V
20V
U
CE=240V
U
CE=960V
QGE, GATE CHARGE
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
Figure 17. Typical gate charge
(IC = 3A)
0V
10V
20V
30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0V
200V
400V
600V
800V
1000V
0A
1A
2A
3A
VCE, COLLECTOR-EMITTER VOLTAGE
tp, PULSE WIDTH
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82Ω, Tj = 150
°C,
Dynamic test circuit in Figure E)
R
,( K / W )
τ , (s)
1.082517
0.000795
0.328671
0.000179
0.588811
0.004631
C1=
τ1/R1
R1
R2
C2=
τ2/R2


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