K4S280832B-TC1L datasheet(6/10 Pages) SAMSUNG

Part #	K4S280832B-TC1L

Description	4M x 8Bit x 4 Banks Sychronous DRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K4S280832B

CMOS SDRAM

Rev. 0.0 Aug. 1999

AC OPERATING TEST CONDITIONS (VDD = 3.3V

± 0.3V, TA = 0 to 70°C)

Parameter

Value

Unit

AC input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

3.3V

1200

Ω

870

Ω

Output

50pF

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

Vtt = 1.4V

50

Ω

Output

50pF

Z0 = 50

Ω

(Fig. 2) AC output load circuit

(Fig. 1) DC output load circuit

OPERATING AC PARAMETER

1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time

and then rounding off to the next higher integer.

2. Minimum delay is required to complete write.

3. All parts allow every cycle column address change.

4. In case of row precharge interrupt, auto precharge and read burst stop.

5. For -80/1H/1L/10, tRDL=1CLK and tDAL=1CLK+20ns is also supported .

SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.

Notes :

(AC operating conditions unless otherwise noted)

Parameter

Symbol

Version

Unit

Note

- 75

- 80

- 1H

- 1L

-10

Row active to row active delay

tRRD(min)

15

16

20

ns

1

RAS to CAS delay

tRCD(min)

20

24

ns

1

Row precharge time

tRP(min)

20

24

ns

1

Row active time

tRAS(min)

45

48

50

ns

1

tRAS(max)

100

us

Row cycle time

tRC(min)

65

68

70

80

ns

1

Last data in to row precharge

tRDL(min)

2

CLK

2,5

Last data in to Active delay

tDAL(min)

2 CLK + 20 ns

-

5

Last data in to new col. address delay

tCDL(min)

1

CLK

2

Last data in to burst stop

tBDL(min)

1

CLK

2

Col. address to col. address delay

tCCD(min)

1

CLK

3

Number of valid output data

CAS latency=3

2

ea

4

CAS latency=2

-

1

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K4S280832B-TC1L Datasheet(PDF) 6 Page - Samsung semiconductor

K4S280832B-TC1L Datasheet(HTML) 6 Page - Samsung semiconductor

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