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2 - 3

VHFD 37

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

x for resistive load

IXYS reserves the right to change limits, test conditions and dimensions.

Symbol

Test Conditions

Maximum Ratings

I

FAV

T

°C, per Diode

4

A

I

FAVM

per diode

4

A

I

FRMS

per diode

6

A

I

FSM

T

°C;

t = 10 ms (50 Hz), sine

100

A

V

t = 8.3 ms (60 Hz), sine

110

A

T

t = 10 ms (50 Hz), sine

85

A

V

t = 8.3 ms (60 Hz), sine

94

A

T

°C

t = 10 ms (50 Hz), sine

50

V

t = 8.3 ms (60 Hz), sine

50

T

t = 10 ms (50 Hz), sine

36

V

t = 8.3 ms (60 Hz), sine

37

I

R

V

T

1mA

T

°C

0.15

mA

V

F

I

°C

1.83

V

V

T0

For power-loss calculations only (T

0.9

V

r

T

50

m

W

R

thJC

per diode; DC current

4.4

K/W

R

thJH

per diode; DC current

5.2

K/W

Field Diodes

Symbol

Test Conditions

Characteristic Values

I

V

T

£

5mA

T

°C

£

0.3

mA

V

I

°C

£

1.45

V

V

T0

For power-loss calculations only (T

0.85

V

r

T

13

m

W

V

GT

V

T

°C

£

1.0

V

T

°C

£

1.2

V

I

GT

V

T

°C

£

65

mA

T

°C

£

80

mA

T

°C

£

50

mA

V

GD

T

£

0.2

V

I

GD

T

£

5mA

I

L

I

ms; T

°C

£

150

mA

di

ms;

T

°C

£

200

mA

T

°C

£

100

mA

I

H

T

°C; V

¥£

100

mA

t

gd

T

°C; V

£

2

ms

I

ms

t

q

T

°C, I

ms, V

typ.

150

ms

Q

r

di/dt = -10 A/

ms, dv/dt = 20 V/ms, V

75

mC

R

thJC

per thyristor (diode); DC current

1.2

K/W

per module

0.3

K/W

R

thJH

per thyristor (diode); DC current

1.55

K/W

per module

0.39

K/W

Fig. 1 Gate trigger range

Fig. 2 Gate controlled delay time t

gd

1

10

100

1000

0.1

1

10

I

G

V

G

mA

1: I

V

4: P

I

4

2

1

5

6

10

100

1000

1

10

100

1000

µs

t

gd

T

typ.

Limit

mA

I

G

3