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TGA4522-EPU Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA4522-EPU Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 10 page TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information January 17, 2005 3 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) TGA4522-EPU PARAMETER TYPICAL UNITS Frequency Range 33 - 47 GHz Drain Voltage, Vd 6.0 V Drain Current, Id 400 mA Gate Voltage, Vg -0.5 V Small Signal Gain, S21 13 dB Input Return Loss, S11 14 dB Output Return Loss, S22 18 dB Output Power @ 1dB Gain Compression, P1dB 26 dBm Saturated Power, Psat 27 dBm TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS TCH ( OC) RTJC ( qC/W) TM (HRS) RθJC Thermal Resistance (channel to Case) Vd = 5 V Id = 400 mA Pdiss = 2.0 W 140 35.5 2.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 50 oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. |
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Similar Description - TGA4522-EPU |
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