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MRF6P3300HR5 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

Part # MRF6P3300HR5
Description  RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF6P3300HR5 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc

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MRF6P3300HR3 MRF6P3300HR5
7
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
800
16
23
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 32 Vdc
IDQ = 1600 mA
f = 860 MHz
100
10
21
20
19
18
17
50
40
30
20
10
Gps
ηD
5
TC = −30_C
85
_C
25
_C
−30
_C
22
60
25
_C
85
_C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 12 V
400
16.5
21.5
50
20.5
17.5
200
18
18.5
24 V
IDQ = 1600 mA
f = 860 MHz
20 V
16 V
32 V
0
19.5
100
150
250
300
350
28 V
17
19
20
21
210
1010
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
120
140
160
180
200
109
100
190
170
150
130
110


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