EM39LV800

8M Bits (512Kx16) Flash Memory

SPECIFICATION

This specification is subject to change without further notice. (04.09.2004 V1.0)

Page 10 of 25

Device Geometry Information

Address

Data

Data

27H

0014H

Device size=2

28H

29H

0001H

0000H

Flash Device Interface description; 0001H=x16-only asynchronous

interface

2AH

2BH

0000H

0000H

Maximum number of byte in multi-byte write=2

supported)

2CH

0002H

Number of Erase Sector/Block sizes supported by device

2DH

2EH

2FH

30H

00FFH

0000H

0010H

0000H

Sector Information (y+1=Number of sectors; z x 256B=sector size)

y=255+1=256 sectors (00FFH=255)

z=16 x 256 Bytes=4Kbyte/sector (0010H=16)

31H

32H

33H

34H

000FH

0000H

0000H

0001H

Block Information (y+1=Number of blocks; z x 256B=block size)

y=15+1=16 blocks (000FH=15)

z=256 x 256 Bytes=64 Kbyte/block (0100H=256)

Table 6: Device Geometry Information

Absolute Maximum Ratings

NOTE

Applied conditions greater than those listed under these ratings may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these conditions or conditions greater than those defined in the operational sections of this

specification, are not implied. Exposure to absolute maximum stress rating conditions may

affect device reliability.

Temperature Under Bias ............................................................ –55°C to 125°C

Storage Temperature .................................................................. –65°C to 150°C

Voltage on A9 Pin to Ground Potential......................................... –0.5 V to 13.2V

Package Power Dissipation Capability (Ta=25

°C)........................ 1.0W

Surface Mount Lead Soldering Temperature (3 Seconds)............ 240

°C

Output Short Circuit Current

No more than one output shorted at a time.