EM39LV80070D datasheet(9/25 Pages) EMC

Part #	EM39LV80070D

Description	8M Bits (512Kx16) Flash Memory

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Manufacturer	EMC [ELAN Microelectronics Corp]

Direct Link	http://www.emc.com.tw

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EM39LV800

8M Bits (512Kx16) Flash Memory

SPECIFICATION

This specification is subject to change without further notice. (04.09.2004 V1.0)

Page 9 of 25

CFI Query Identification String*

Address

Data

10H

0051H

11H

0052H

12H

0059H

Query Unique ASCII string “QRY”

13H

0001H

14H

0007H

Primary OEM command set

15H

0000H

16H

0000H

Address for Primary Extend Table

17H

0000H

18H

0000H

Alternate OEM command set (00H=none exists)

19H

0000H

1AH

0000H

Address for Alternate OEM extended Table (00H=none exists)

* Refer to CFI publication 100 for more details.

Table 4: CFI Query Identification String1

System Interface

Address

Data

VDD Min (Program/Erase)

1BH

0027H

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH

0036H

VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH

0000H

VPP min (00H=no VPP pin)

1EH

0000H

VPP max (00H=no VPP pin)

1FH

0004H

Typical time out for Word-Program 2

N µs (24=16µs)

20H

0000H

Typical time out for min size buffer program 2

N µs (00H=not supported)

21H

0004H

Typical time out for individual Sector/Block-Erase 2

N ms (24=16ms)

22H

0006H

Typical time out for Chip-Erase 2

N ms (26=64ms)

23H

0001H

Maximum time out for Word-Program 2

N times typical (21x24=32µs)

24H

0000H

Maximum time out for buffer Program 2

N times typical

25H

0001H

Maximum time out for individual Sector/Block-Erase 2

N times typical

(2

1x24=32ms)

26H

0001H

Maximum time out for Chip-Erase 2

N times typical (21x26=128ms)

Table 5: System Interface

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