Philips Semiconductors

Product specification

Triacs

BT136 series E

sensitive gate

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

plastic envelope, intended for use in

general

purpose

bidirectional

BT136-

600E

800E

switching

and

phase

control

V

DRM

Repetitive peak off-state

600

800

V

applications, where high sensitivity is

voltages

required in all four quadrants.

I

T(RMS)

RMS on-state current

4

4

A

I

TSM

Non-repetitive peak on-state

25

25

A

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

main terminal 1

2

main terminal 2

3

gate

tab

main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-600

-800

V

DRM

Repetitive peak off-state

-

600

1

800

V

voltages

I

T(RMS)

RMS on-state current

full sine wave; T

-

4

A

I

TSM

Non-repetitive peak

full sine wave; T

on-state current

surge

t = 20 ms

-

25

A

t = 16.7 ms

-

27

A

I

t = 10 ms

-

3.1

A

dI

Repetitive rate of rise of

I

on-state current after

dI

triggering

T2+ G+

-

50

A/

µs

T2+ G-

-

50

A/

µs

T2- G-

-

50

A/

µs

T2- G+

-

10

A/

µs

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

T1

T2

G

12 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/

µs.

June 2001

1

Rev 1.400