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K4H560438D

DDR SDRAM

Rev. 2.2 Mar. ’03

16M x 4Bit x 4 Banks Double Data Rate SDRAM

Absolute Maximum Rating

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VIN, VOUT

-0.5 ~ 3.6

V

Voltage on VDD & VDDQ supply relative to VSS

VDD, VDDQ

-1.0 ~ 3.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

1.5

W

Short circuit current

IOS

50

mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability

DC Operating Conditions

The K4H560438D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 4 bits, fabricated

with SAMSUNG

′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to

333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and

programmable latencies allow the device to be useful for a variety of high performance memory system applications.

GENERAL DESCRIPTION

°C)

Parameter

Symbol

Min

Max

Unit

Note

2.3

2.7

I/O Supply voltage

2.3

2.7

V

I/O Reference voltage

VDDQ/2-50mV

VDDQ/2+50mV

V

1

I/O Termination voltage(system)

V

2

Input logic high voltage

V

4

Input logic low voltage

-0.3

V

4

Input Voltage Level, CK and CK inputs

-0.3

V

Input Differential Voltage, CK and CK inputs

0.3

V

3

Input crossing point voltage, CK and CK inputs

1.15

1.35

V

5

Input leakage current

-2

2

uA

Output leakage current

-5

5

uA

Output High Current(Normal strengh driver)

-16.8

mA

Output High Current(Normal strengh driver)

16.8

mA

Output High Current(Half strengh driver)

-9

mA

Output High Current(Half strengh driver)

9mA