Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

TMS29F010-90CSFML Datasheet(PDF) 7 Page - Texas Instruments

Part # TMS29F010-90CSFML
Description  131072 BY 8-BIT FLASH MEMORY
Download  36 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS29F010-90CSFML Datasheet(HTML) 7 Page - Texas Instruments

Back Button TMS29F010-90CSFML Datasheet HTML 3Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 4Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 5Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 6Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 7Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 8Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 9Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 10Page - Texas Instruments TMS29F010-90CSFML Datasheet HTML 11Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 36 page
background image
TMS29F010
131072 BY 8-BIT
FLASH MEMORY
SMJS840A – NOVEMBER 1997 – REVISED JUNE 1998
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
command definitions (continued)
Table 3. Command Definitions
COMMAND
BUS
CYCLES
1ST CYCLE
ADDR DATA
2ND CYCLE
ADDR DATA
3RD CYCLE
ADDR DATA
4TH CYCLE
ADDR DATA
5TH CYCLE
ADDR DATA
6TH CYCLE
ADDR DATA
Read‡
1
RA
RD
Reset/Read§
2
XXXXh F0h
RA
RD
Reset/Read§
4
5555h AAh
2AAAh 55h
5555h F0h
RA
RD
Algorithm selection
4
5555h AAh
2AAAh 55h
5555h 90h
RA
RD
Byte program
4
5555h AAh
2AAAh 55h
5555h A0h
PA
PD
Chip erase
6
5555h AAh
2AAAh 55h
5555h 80h
5555h AAh
2AAAh 55h
5555h 10h
Sector erase
6
5555h AAh
2AAAh 55h
5555h 80h
5555h AAh
2AAAh 55h
SA 30h
RA = Address of the location to be read
PA
= Address of the location to be programmed
SA = Address of the sector to be erased
Addresses A14, A15, and A16 select one of eight sectors
RD = Data to be read at the selected address location
PD = Data to be programmed at the selected address location
† Address pins A15 and A16 = VIL or VIH for all bus-cycle addresses except for program address (PA), sector address (SA), and read address
(RA).
‡ No command cycles are required when the device is in read mode.
§ The reset command is required to return to the read mode when the device is in the algorithm-selection mode or if DQ5 goes high.
reset/read command
The read mode is activated by writing either of the two reset command sequences into the command register.
The device remains in this mode until another valid command sequence is input into the command register.
Memory data is available in the read mode and can be read with standard microprocessor read-cycle timing.
On power up, the device defaults to the read mode; therefore, a reset command sequence is not required and
memory data is available.
algorithm-selection command
The algorithm-selection command allows access to a binary code that matches the device with the proper
programming- and erase-command operations. After writing the three-bus-cycle command sequence, the first
byte of the algorithm-selection code (01h) can be read from address XX00h. The second byte of the code (20h)
can be read from address XX01h (see Table 2). This mode remains in effect until another valid command
sequence is written to the device.
Sector protection can be determined by using the algorithm-selection command. After issuing the three
bus-cycle command sequence, the sector-protection status can be read on DQ0. Set address pins A0 = VIL and
A1 = VIH, and then the sector address pins A14, A15, and A16 select the sector to be checked. The remaining
address pins can be VIL or VIH. If the sector that is selected is protected, DQ0 outputs a 1 state, and, if the sector
selected is not protected, DQ0 outputs a 0 state. This mode remains in effect until another valid command
sequence is written to the device.
byte-program command
Byte programming is a four-bus-cycle command sequence. The first three bus cycles put the device into the
program-setup state, and the fourth bus cycle loads the address location and the data to be programmed into
the device. The addresses are latched on the falling edge of W and the data is latched on the rising edge of W
in the fourth bus cycle. The rising edge of W starts the byte-program operation. The embedded
byte-programming function automatically provides needed voltage and timing to program and to verify the cell
margin. Any further commands written to the device during the program operation are ignored.


Similar Part No. - TMS29F010-90CSFML

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
TMS29F010-90C5FME TI1-TMS29F010-90C5FME Datasheet
461Kb / 36P
[Old version datasheet]   Compatible With JEDEC Byte-Wide Pinouts
TMS29F010-90C5FML TI1-TMS29F010-90C5FML Datasheet
461Kb / 36P
[Old version datasheet]   Compatible With JEDEC Byte-Wide Pinouts
More results

Similar Description - TMS29F010-90CSFML

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
SMJ28F010B TI-SMJ28F010B Datasheet
335Kb / 23P
[Old version datasheet]   131072 BY 8-BIT FLASH MEMORY
TMS28F010B TI-TMS28F010B Datasheet
332Kb / 23P
[Old version datasheet]   131072 BY 8-BIT FLASH MEMORY
logo
Mitsubishi Electric Sem...
M5M28F101AFP MITSUBISHI-M5M28F101AFP Datasheet
96Kb / 10P
   1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
logo
List of Unclassifed Man...
HN28F101 ETC-HN28F101 Datasheet
106Kb / 18P
   131072-word x 8-bit CMOS Flash Memory
logo
Texas Instruments
TMS28F200BZT TI-TMS28F200BZT Datasheet
405Kb / 29P
[Old version datasheet]   262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS29F040 TI-TMS29F040 Datasheet
482Kb / 37P
[Old version datasheet]   524288 BY 8-BIT FLASH MEMORY
TMS28F020 TI-TMS28F020 Datasheet
312Kb / 21P
[Old version datasheet]   262144 BY 8-BIT FLASH MEMORY
TMS28F512A TI-TMS28F512A Datasheet
311Kb / 21P
[Old version datasheet]   65536 BY 8-BIT FLASH MEMORY
TMS28F002AXY TI-TMS28F002AXY Datasheet
1Mb / 79P
[Old version datasheet]   262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
logo
Sanyo Semicon Device
LE28C1001M SANYO-LE28C1001M Datasheet
281Kb / 14P
   1MEG (131072 words x 8 bits) Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com