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THS3201DBVT Datasheet(PDF) 5 Page - Texas Instruments |
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THS3201DBVT Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 29 page  THS3201 SLOS416A − JUNE 2003 − REVISED JANUARY 2004 www.ti.com 5 ELECTRICAL CHARACTERISTICS VS = ±5 V: Rf = 715 Ω, RL = 100 Ω, and G = +2 unless otherwise noted THS3201 PARAMETER TEST CONDITIONS TYP OVER TEMPERATURE PARAMETER TEST CONDITIONS 25 °C 25 °C 0 °C to 70 °C −40 °C to 85 °C UNITS MIN/TYP/ MAX AC PERFORMANCE G = +1, RF= 1.2 kΩ 1.3 GHz Small-signal bandwidth, −3dB G = +2, RF = 715 Ω 725 Typ Small-signal bandwidth, −3dB (VO = 200 mVPP) G = +5, RF = 576 Ω 540 MHz Typ (VO = 200 mVPP) G = +10, RF = 464 Ω 480 MHz Bandwidth for 0.1 dB flatness G = +2, VO = 200 mVpp, RF= 715 Ω 170 MHz Typ Large-signal bandwidth G = +2, VO = 2 Vpp, RF= 715 Ω 900 MHz Typ Slew rate (25% to 75% level) G = +1, VO = 5-V step 5200 V/ µs Typ Slew rate (25% to 75% level) G = +2, VO = 5-V step 5200 V/ µs Typ Rise and fall time G = +2, VO = 4-V step, RF= 715 Ω 0.7 ns Typ Settling time to 0.1% G = −2, VO = 2-V step 20 ns Typ 0.01% G = −2, VO = 2-V step 60 ns Typ Harmonic distortion G = +5, f = 10 MHz, VO = 2 Vpp 2nd harmonic RL = 100 Ω −68 dBc Typ 2nd harmonic RL = 500 Ω −70 dBc Typ 3rd harmonic RL = 100 Ω −72 dBc Typ 3rd harmonic RL = 500 kΩ −74 dBc Typ Third-order intermodulation distortion (IMD3) G = +10, fc = 100 MHz, ∆f = 200 kHz, −65 dBc Typ Third-order output intercept point (OIP3) c ∆f = 200 kHz, VO(envelope) = 2 Vpp 33.5 dBm Typ Noise figure G = +10, fc = 100 MHz, RF = 255 Ω, RG = 28 11 dB Typ Input voltage noise f > 10 MHz 1.65 nV/ √Hz Typ Input current noise (noninverting) f > 10 MHz 13.4 pA/ √Hz Typ Input current noise (inverting) f > 10 MHz 20 pA/ √Hz Typ Differential gain NTSC 0.006% Typ Differential gain G = +2, RL = 150 Ω, PAL 0.004% Typ Differential phase G = +2, RL = 150 Ω, RF= 768 Ω NTSC 0.03 ° Typ Differential phase RF= 768 PAL 0.04 ° Typ DC PERFORMANCE Open-loop transimpedance gain VO = +1 V, RL = 1 kΩ 300 200 140 120 k Ω Min Input offset voltage VCM =0 V ±0.7 ±3 ±3.8 ±4 mV Max Average offset voltage drift VCM = 0 V ±10 ±13 µV/°C Typ Input bias current (inverting) VCM = 0 V ±13 ±60 ±80 ±85 µA Max Average bias current drift (−) VCM = 0 V ±300 ±400 nA/ °C Typ Input bias current (noninverting) VCM = 0 V ±14 ±35 ±45 ±50 µA Max Average bias current drift (+) VCM = 0 V ±300 ±400 nA/ °C Typ |
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