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Thermal Resistance
Symbol
Parameter
DPAK
Ratings
Units
R
ΘJA
Thermal Resistance Junction-to-Ambient
85
°C/W
R
ΘJC
Thermal Resistance Junction-to-Case
2.0
°C/W
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The
φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Static
BVDSX
Breakdown Voltage
Drain to Source
ID = 0.5 mA
VGS= -4 V
φ
15
V
BVGDO
Breakdown Voltage
Gate to Drain
IG = -50µA
φ
-18
V
BVGSO
Breakdown Voltage
Gate to Source
IG = -1 mA
φ
-12
-10
V
RDS(ON)
Static Drain to Source1 On
Resistance (Current flows
drain-to-source) See Fig. 1
IG = 40 mA, ID=10A
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
5.5
6
7
8
9
m
Ω
m
Ω
VGS(TH)
Gate Threshold Voltage
VDS=0.1 V, ID=250µA
-1200
-500
mV
Dynamic
QG
Total Gate Charge
∆VDrive =5V, ID=10A,VDS=15V
11
nC
QGD
Gate to Drain Charge
6.5
nC
QGS
Gate to Source Charge
1.0
nC
QSW
Switching Charge
7.5
nC
RG
Gate Resistance
1
Ω
TD(ON)
Turn-on Delay Time
φ
5
TR
Rise Time
φ
10
TD(OFF)
Turn-off Delay
2
TF
Fall Time
VDD=12V, ID=10A
VDrive = 5 V
Clamped Inductive Load
8
ns
CISS
Input Capacitance
1600
COSS
Output Capacitance
450
CGS
Gate-Source Capacitance
1100
CGD
Gate-Drain Capacitance
400
CDS
Drain-Source Capacitance
VDS=10V, VGS= -5 V, 1MHz.
110
pF
Schottky Diode
IR
Reverse Leakage
VR=15V
0.25
0.5
mA
VF
Forward Voltage
IF = 1 A
400
mV
VF
Forward Voltage
IF = 10 A
750
900
mV
VF
Forward Voltage
IF = 20 A
1100
mV
Qrr
Reverse Recovery Charge
Is = 20 A di/dt = 200A/us,
4
nC
Notes:
1. Pulse width <= 500µs, duty cycle < = 2%
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1106S
Product Specification
2
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