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K1S1616B1A-BI70 Datasheet(PDF) 6 Page - Samsung semiconductor |
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K1S1616B1A-BI70 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 10 page Revision 0.0 October 2003 K1S1616B1A - 6 - UtRAM Preliminary AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Test Input/Output Reference) Input pulse level: 0.2 to Vcc-0.2V Input rising and falling time: 5ns Input and output reference voltage: 0.5 x VCC Output load (See right): CL=50pF CL 1. Including scope and jig capacitance Dout AC CHARACTERISTICS(Vcc=1.7~2.1V, TA=-40 to 85 °C) 1. tWP(min)=70ns for continuous write operation over 50 times. Parameter List Symbol Speed Bins Units 70ns 85ns Min Max Min Max Read Read Cycle Time tRC 70 - 85 - ns Address Access Time tAA - 70 - 85 ns Chip Select to Output tCO - 70 - 85 ns Output Enable to Valid Output tOE - 35 - 40 ns UB, LB Access Time tBA - 70 - 85 ns Chip Select to Low-Z Output tLZ 10 - 10 - ns UB, LB Enable to Low-Z Output tBLZ 10 - 10 - ns Output Enable to Low-Z Output tOLZ 5 - 5 - ns Chip Disable to High-Z Output tHZ 0 25 0 25 ns UB, LB Disable to High-Z Output tBHZ 0 25 0 25 ns Output Disable to High-Z Output tOHZ 0 25 0 25 ns Output Hold from Address Change tOH 5 - 5 - ns Write Write Cycle Time tWC 70 - 85 - ns Chip Select to End of Write tCW 60 - 70 - ns Address Set-up Time tAS 0 - 0 - ns Address Valid to End of Write tAW 60 - 70 - ns UB, LB Valid to End of Write tBW 60 - 70 - ns Write Pulse Width tWP 551) - 601) - ns Write Recovery Time tWR 0 - 0 - ns Write to Output High-Z tWHZ 0 25 0 25 ns Data to Write Time Overlap tDW 30 - 35 - ns Data Hold from Write Time tDH 0 - 0 - ns End Write to Output Low-Z tOW 5 - 5 - ns |
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