SIF912EDZ-T1-E3 datasheet(2/5 Pages) VISHAY

Part #	SIF912EDZ-T1-E3

Description	Bi-Directional N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiF912EDZ

Vishay Siliconix

www.vishay.com

2

Document Number: 72952

S-50131—Rev. B, 24-Jan-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.5

V

Gate Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"10

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"500

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 85_C

5

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

40

A

VGS = 4.5 V, ID =7.4 A

0.0155

0.019

Drain Source On State Resistancea

r

VGS = 4.0 V, ID = 7.3 A

0.016

0.0195

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 3.1 V, ID = 6.8 A

0.018

0.022

W

VGS = 2.5 V, ID = 3.5 A

0.022

0.027

Forward Transconductancea

gfs

VDS = 10 V, ID = 7.4 A

37

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.75

1.1

V

Dynamicb

Total Gate Charge

Qg

9.8

15

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 7.4 A

2.5

nC

Gate-Drain Charge

Qgd

DS

, GS

, D

2.9

Turn-On Delay Time

td(on)

0.53

0.8

Rise Time

tr

VDD = 15 V, RL = 15 W

0.70

1.1

ms

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

8.0

12

ms

Fall Time

tf

g

3.4

5

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0001

100

100,000

Gate Current vs. Gate-Source Voltage

0

4

8

12

16

0

2

4

6

8

10

12

14

16

Gate-Current vs. Gate-Source Voltage

VGS − Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS − Gate-to-Source Voltage (V)

0

369

52

TJ = 25_C

TJ = 150_C

10,000

0.01

0.001

12

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