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SIF912EDZ-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIF912EDZ-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SiF912EDZ Vishay Siliconix www.vishay.com 2 Document Number: 72952 S-50131—Rev. B, 24-Jan-05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 1.5 V Gate Body Leakage IGSS VDS = 0 V, VGS = "4.5 V "10 Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "500 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 40 A VGS = 4.5 V, ID =7.4 A 0.0155 0.019 Drain Source On State Resistancea r VGS = 4.0 V, ID = 7.3 A 0.016 0.0195 W Drain-Source On-State Resistancea rDS(on) VGS = 3.1 V, ID = 6.8 A 0.018 0.022 W VGS = 2.5 V, ID = 3.5 A 0.022 0.027 Forward Transconductancea gfs VDS = 10 V, ID = 7.4 A 37 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg 9.8 15 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.4 A 2.5 nC Gate-Drain Charge Qgd DS , GS , D 2.9 Turn-On Delay Time td(on) 0.53 0.8 Rise Time tr VDD = 15 V, RL = 15 W 0.70 1.1 ms Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 8.0 12 ms Fall Time tf g 3.4 5 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0001 100 100,000 Gate Current vs. Gate-Source Voltage 0 4 8 12 16 0 2 4 6 8 10 12 14 16 Gate-Current vs. Gate-Source Voltage VGS − Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS − Gate-to-Source Voltage (V) 0 369 52 TJ = 25_C TJ = 150_C 10,000 0.01 0.001 12 |
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